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| SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 MARCH 94 PARTMARKING DETAIL 7 ZB FMMT4123 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter SaturationVoltage Static Forward Current Transfer Ratio Transistion Frequency Output Capacitance Input Capacitance Noise Figure Small Signal Current Transfer PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo Cibo N hfe 50 25 250 MIN. 40 30 5 50 50 0.3 0.95 150 4 8 6 50 200 MHz pF pF dB SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. UNIT V V V nA nA V V VALUE 40 30 5 200 330 -55 to +150 CONDITIONS. IC=10A IC=1mA* IE=10A VCB=20V VEB=3V IC=50mA, IB=5mA* IC=50mA, IB=5mA* IC=2mA, VCE=1V* IC=50mA, VCE=1V* IC=10mA, VCE=20V, f=100MHz VCB=5V, IE=0, f=140KHz VBE=0.5V, IE=0, f=140KHz IC=200A, VCE=5V, Rg=2k f=30Hz to 15KHz at 3dB points IC=2mA, VCE=1V, f=1KHz UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). SWITCHING CHARACTERISTICS (at Tamb = 25C). SYMBOL td tr ts tf TYP. 24 13 125 11 ns ns ns ns UNIT CONDITIONS VCC=3V, VBE(off) =0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% |
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